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Mje2955 datasheet pdf
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Mje2955 datasheet pdf

Mje2955 datasheet pdf
 

Datasheet: 123kb/ 3p. part # : mje2955. limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1 vdc ( max) @ ic = 4 adc excellent safe operating area pb− free packages are available* maximum ratings maximum ratings are those values beyond which device damage can occur. at high case temperatures, thermal. datasheet: 37kb/ 4p. order quality mje2955 and other parts from authorized suppliers. second breakdown pulse limits are valid for duty cycles to 10% provided tj( pk) 150° c. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a.

description: power transistors ( 10a, 60v, 75w). mje2955 datasheet ( pdf) - mospec semiconductor preview pdf mje2955 datasheet pdf download html mje2955 datasheet ( pdf) - mospec semiconductor description power transistors ( 10a, 60v, 75w) mje2955 datasheet ( html) - mospec semiconductor mje2955 product details complementary silicon power transistors. the complementary pnp type is mje2955t. tc is variable depending on conditions. 123 motorola bipolar power transistor device data package dimensions seating plane case 221a- 06 to- 220ab issue y mje2955t mje3055t notes: 1.

datasheet identification mje2955 datasheet pdf product status definition advance information formative or in design this datasheet contains the design specifications for product development. - mje2955 more results similar description - mje2955. digipart offer a vast selection of electronic components. manufacturer: fairchild semiconductor.

dimensioning and tolerancing per ansi. high- quality and fast shipping. manufacturer: mospec semiconductor. order quality mje2955 and other parts from authorized suppliers. high- quality and fast shipping it is intended for power switching circuits and general- purpose amplifiers. mje2955t mje3055t complementary silicon power transistors stmicroelectronics preferred salestypes complementary pnp - npn devices description the mje3055t is a silicon epitaxial- base npn transistor in jedec to- 220 package. specifications may change in any manner without notice. features dc current gain − hfe = 20− 70 @ ic = 4 adc collector− emitter saturation voltage − vce( sat) = 1. 1 link url mje2955 datasheet.

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